Datasheet > FDW2601NZ

FDW2601NZ

更新时间： 2024-11-18 22:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	265K
描述
Dual N-Channel 2.5V Specified PowerTrench MOSFET

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FDW2601NZ 数据手册

December 2004

FDW2601NZ

Dual N-Channel 2.5V Specified PowerTrench

MOSFET

Features

General Description

! 8.2A, 30V

= 0.015Ω, V = 4.5V

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench process that has

been especially tailored to minimize the on-state resistance

and yet maintain low gate charge for superior switching

performance. These devices are well suited for portable

electronics applications.

DS(ON)

= 0.020Ω, V = 2.5V

DS(ON)

! Extended V range (±12 V) for battery applications

! HBM ESD Protection Level of 3.5kV Typical (note 3)

! High performance trench technology for extremely low

DS(ON)

! Low profile TSSOP-8 package

Applications

! Load switch

! Battery charge

! Battery disconnect circuits

Pin 1

TSSOP-8

FDW2601NZ Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...11

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