Datasheet > FDW2521C_08

FDW2521C_08

更新时间： 2024-11-19 03:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	250K
描述
Complementary PowerTrench MOSFET

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数据手册

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FDW2521C_08 数据手册

July 2008

FDW2521C

Complementary PowerTrench MOSFET

General Description

Features

This complementary MOSFET device is produced using

Fairchild’s advanced PowerTrench process that has

been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for

superior switching performance.

•

Q1: N-Channel

5.5 A, 20 V. R_DS(ON)= 21 mΩ @ V_GS= 4.5 V

R_DS(ON)= 35 mΩ @ V_GS= 2.5 V

•

Q2: P-Channel

Applications

–3.8 A, 20 V. R_DS(ON)= 43 mΩ @ V_GS= –4.5 V

R_DS(ON)= 70 mΩ @ V_GS= –2.5 V

• DC/DC conversion

• Power management

• Load switch

•

High performance trench technology for extremely

low R_DS(ON)

Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

±12

5.5

–20

±12

–3.8

–30

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

P_D

Power Dissipation

(Note 1a)

(Note 1b)

1.0

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

125

208

R_θJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2521C

FDW2521C

13’’

12mm

2500 units

FDW2521C Rev D1(W)

2008 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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