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FDW252P_NL PDF预览

FDW252P_NL

更新时间: 2024-11-19 13:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
6页 229K
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FDW252P_NL 数据手册

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June 2000  
PRELIMINARY  
FDW252P  
P-Channel 2.5V Specified PowerTrenchMOSFET  
General Description  
Features  
This P-Channel 2.5V specified MOSFET is a rugged  
gate version of Fairchild Semiconductor’s advanced  
PowerTrench process. It has been optimized for power  
management applications with a wide range of gate  
drive voltage (2.5V – 12V).  
–8.8 A, –20 V. RDS(ON) = 0.012 @ VGS = –4.5 V  
RDS(ON) = 0.018 @ VGS = –2.5 V  
Extended VGSS range ( 12V) for battery  
applications  
Applications  
Low gate charge  
Load switch  
Motor drive  
DC/DC conversion  
Power management  
High performance trench technology for extremely  
low RDS(ON)  
Low profile TSSOP-8 package  
D
S
S
5
6
7
8
4
3
2
1
D
G
S
S
D
TSSOP-8  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
-20  
12  
V
V
A
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
(Note 1)  
-8.8  
-50  
PD  
Power Dissipation  
(Note 1a)  
(Note 1b)  
1.3  
0.6  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
96  
208  
RθJA  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
252P  
FDW252P  
13’’  
16mm  
3000 units  
FDW252P Rev. B(W)  
2000 Fairchild Semiconductor Corporation  

FDW252P_NL 替代型号

型号 品牌 替代类型 描述 数据表
FDW252P FAIRCHILD

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P-Channel 2.5V Specified PowerTrench MOSFET

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