Datasheet > FDW254P_01

FDW254P_01

更新时间： 2024-11-23 03:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	96K
描述
P-Channel 1.8V Specified PowerTrench MOSFET

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中文翻译

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数据手册

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FDW254P_01 数据手册

January 2001

FDW254P

P-Channel 1.8V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 1.8V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (1.8V – 8V).

• –9.2 A, –20 V.

R_DS(ON)= 12 mΩ @ V_GS= –4.5 V

R_DS(ON)= 15 mΩ @ V_GS= –2.5 V

R_DS(ON)= 21.5 mΩ @ V_GS= –1.8 V

• Rds ratings for use with 1.8 V logic

• Low gate charge

Applications

• Load switch

• High performance trench technology for extremely

• Motor drive

low R_DS(ON)

• DC/DC conversion

• Power management

• Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–20

Units

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±8

(Note 1)

–9.2

–50

1.3

P_D

Power Dissipation

(Note 1a)

(Note 1b)

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

°C

–55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

R_θJA

°C/W

208

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

254P

FDW254P

13’’

12mm

3000 units

FDW254P Rev D (W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

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