Datasheet > FDW2516NZ

FDW2516NZ

更新时间： 2024-11-18 21:54:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	136K
描述
Common Drain N-Channel 2.5V specified PowerTrench MOSFET

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中文翻译

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FDW2516NZ 数据手册

March 2003

FDW2516NZ

Common Drain N-Channel 2.5V specified PowerTrench^ÒMOSFET

General Description

Features

This dual N-Channel MOSFET has been designed

5.8 A, 20 V

R_DS(ON)= 30 mW @ V_GS= 4.5 V

R_DS(ON)= 40 mW @ V_GS= 2.5 V

using

Fairchild

Semiconductor’s

advanced

PowerTrench process to optimize the R_DS(ON)@ V_GS

2.5v on special TSSOP-8 lead frame with all the drains

on one side of the package.

Isolated source and drain pins

ESD protection diode (note 3)

Applications

Li-Ion Battery Pack

High performance trench technology for extremely

low R_DS(ON)@ V_GS= 2.5 V

Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

±12

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

5.8

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.6

P_D

1.1

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

R_qJA

°C/W

Thermal Resistance, Junction-to-Ambient

114

R_qJA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2516NZ

FDW2516NZ

13’’

12mm

3000 units

FDW2516NZ Rev B

Ó2003 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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