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FDW2515N PDF预览

FDW2515N

更新时间: 2024-11-22 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 119K
描述
Common Drain N-Channel 2.5V specified PowerTrench MOSFET

FDW2515N 数据手册

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February 2003  
FDW2515NZ  
Common Drain N-Channel 2.5V specified PowerTrench MOSFET  
General Description  
Features  
This N-Channel 2.5V specified MOSFET is a rugged  
gate version of Fairchild's Semiconductor’s advanced  
PowerTrench process. It has been optimized for power  
management applications with a wide range of gate  
drive voltage (2.5V – 12V).  
5.8 A, 20 V  
RDS(ON) = 28 m@ VGS = 4.5 V  
RDS(ON) = 38 m@ VGS = 2.5 V  
Extended VGSS range (±12V) for battery applications  
ESD protection diode (note 3)  
Applications  
Li-Ion Battery Pack  
High performance trench technology for extremely  
low RDS(ON) @ VGS = 2.5 V  
Low profile TSSOP-8 package  
TSSOP-8  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
20  
V
V
A
VGSS  
Gate-Source Voltage  
±12  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
5.8  
20  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
1.6  
PD  
W
1.1  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
77  
RθJA  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
114  
RθJA  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
2515NZ  
FDW2515NZ  
13’’  
12mm  
3000 units  
FDW2515NZ Rev C  
2003 Fairchild Semiconductor Corporation  

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