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FDS6984SD84Z PDF预览

FDS6984SD84Z

更新时间: 2024-11-13 07:23:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲光电二极管晶体管
页数 文件大小 规格书
12页 689K
描述
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOIC-8

FDS6984SD84Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.71
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):8.5 A最大漏源导通电阻:0.019 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS6984SD84Z 数据手册

 浏览型号FDS6984SD84Z的Datasheet PDF文件第2页浏览型号FDS6984SD84Z的Datasheet PDF文件第3页浏览型号FDS6984SD84Z的Datasheet PDF文件第4页浏览型号FDS6984SD84Z的Datasheet PDF文件第5页浏览型号FDS6984SD84Z的Datasheet PDF文件第6页浏览型号FDS6984SD84Z的Datasheet PDF文件第7页 
September 2000  
FDS6984S  
Dual Notebook Power Supply N-Channel PowerTrenchSyncFET™  
General Description  
Features  
The FDS6984S is designed to replace two single SO-8  
MOSFETs and Schottky diode in synchronous DC:DC  
power supplies that provide various peripheral voltages  
for notebook computers and other battery powered  
electronic devices. FDS6984S contains two unique  
30V, N-channel, logic level, PowerTrench MOSFETs  
designed to maximize power conversion efficiency.  
Q2:  
Optimized to minimize conduction losses  
Includes SyncFET Schottky diode  
8.5A, 30V RDS(on) = 19 m=@ VGS = 10V  
RDS(on) = 28 m=@ VGS = 4.5V  
Q1:  
Optimized for low switching losses  
Low gate charge ( 5 nC typical)  
The high-side switch (Q1) is designed with specific  
emphasis on reducing switching losses while the low-  
side switch (Q2) is optimized to reduce conduction  
losses. Q2 also includes an integrated Schottky diode  
using Fairchild’s monolithic SyncFET technology.  
5.5A, 30V  
RDS(on) = 0.040=@ VGS = 10V  
RDS(on) = 0.055=@ VGS = 4.5V  
D1  
D1  
5
6
7
8
4
D2  
Q1  
3
2
1
D2  
Q2  
G1  
S1  
SO-8  
G2  
S2  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
Q2  
Q1  
Units  
V
V
A
30  
20  
8.5  
30  
30  
20  
5.5  
20  
(Note 1a)  
PD  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
1.6  
1
W
(Note 1a)  
(Note 1b)  
(Note 1c)  
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
40  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6984S  
FDS6984S  
13”  
12mm  
2500 units  
FDS6984S Rev C(W)  
2000 Fairchild Semiconductor Corporation  

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