Datasheet > FDR54SUT3G

FDR54SUT3G

更新时间： 2024-09-17 01:15:11

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	170K
描述
Dual Series Schottky Barrier Diodes

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中文翻译

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数据手册

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FDR54SUT3G 数据手册

SEMICONDUCTOR

FDR54SU

TECHNICAL DATA

Dual Series Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low forward

voltage reduces conduction loss. Miniature surface mount package is excel-

lent for hand held and portable applications where space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.35 Volts (Typ) @ I _F= 10 mAdc

SC-70

We declare that the material of product

compliance with RoHS requirements.

CATHODE

ANODE

ORDERING INFORMATION AND MARKING

Device

Marking

Shipping

FDR54SUT1G

3000/Tape & Reel

CATHODE/ANODE

FDR54SUT3G

10000/Tape & Reel

MAXIMUM RATINGS (T _J= 125°C unless otherwise noted)

Rating Symbol

Reverse Voltage

Value

Unit

V _R

P _F

Volts

Forward Power Dissipation

@ T _A= 25°C

200

1.6

mW/°C

Derate above 25°C

Forward Current(DC)

Junction Temperature

Storage Temperature Range

I_F

200Max

125Max

–55 to +150

T _J

°C

T _stg

°C

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic

Symbol

V_(BR)R

C_T

Min

—

Typ

Max

—

Unit

Volts

Reverse Breakdown Voltage (I _R= 10 µA)

Total Capacitance (V _R= 1.0 V, f = 1.0 MHz)

Reverse Leakage (V _R= 25 V)

—

7.6

I_R

—

0.5

2.0

0.24

0.5

1.0

µAdc

Vdc

Forward Voltage (I _F= 0.1 mAdc)

Forward Voltage (I _F= 30 mAdc)

Forward Voltage (I _F= 100 mAdc)

Reverse Recovery Time

V_F

—

0.22

0.41

0.52

V_F

—

V_F

—

t_rr

—

5.0

(I _F= I _R= 10 mAdc, I _R(REC)= 1.0 mAdc, Figure 1)

Forward Voltage (I _F= 1.0 mAdc)

Forward Voltage (I _F= 10 mAdc)

Forward Current (DC)

V_F

—

0.29

0.35

—

0.32

0.40

200

300

600

Vdc

I_F

mAdc

Repetitive Peak Forward Current

Non–Repetitive Peak Forward Current (t < 1.0 s)

I_FRM

I_FSM

—

2009. 05. 08

Revision No : 0

1/3

12 3

中文翻译

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