FDR8305

更新时间： 2024-09-15 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	217K
描述
Dual N-Channel 2.5V Specified PowerTrench MOSFET

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数据手册

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FDR8305 数据手册

November 1999

FDR8305N

Dual N-Channel 2.5V Specified PowerTrench MOSFET

Features

General Description

These N-Channel 2.5V specified MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for

superior switching performance.

• 4.5 A, 20 V. R_DS(ON)= 0.022 Ω @ V_GS= 4.5 V

_DS(ON)= 0.028 Ω @ V_GS= 2.5 V.

• Low gate charge (16.2nC typical).

• Fast switching speed.

Applications

• Load switch

• Motor driving

•

High performance trench technology for extremely

low R_DS(ON)

• Power Management

• Small footprint (38% smaller than a standard SO-8);low

profile package (1 mm thick); power handling capability

similar to SO-8.

SuperSOT^TM-8

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

(Note 1a)

Drain Current - Continuous

4.5

- Pulsed

P_D

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

0.8

T_J, T_stg

-55 to +150

Thermal Characteristics

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

156

R_θ_JA

C/W

R_θ_JC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

.8305

FDR8305N

13’’

12mm

3000 units

1999 Fairchild Semiconductor Corporation

FD8305N Rev. C

12 3 4 5 6 7 8

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与FDR8305相关器件

型号	品牌	获取价格	描述	数据表
FDR8305N	FAIRCHILD	获取价格	Dual N-Channel 2.5V Specified PowerTrench MOSFET
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