Datasheet > FDR8308P

FDR8308P

更新时间： 2024-09-15 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	269K
描述
Dual P-Channel, Logic Level, PowerTrenchTM MOSFET

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FDR8308P 数据手册

November 1998

FDR8308P

Dual P-Channel, Logic Level, PowerTrench^TMMOSFET

General Description

Features

The SuperSOT-8 family of P-Channel Logic Level MOSFETs

have been designed to provide a low profile, small footprint

alternative to industry standard SO-8 little foot type product.

-3.2 A, -20 V. R_DS(ON)= 0.050 W @ V_GS= -4.5 V,

_DS(ON)= 0.070 W @ V_GS= -2.5 V.

Low gate charge (13nC typical).

These P-Channel Logic Level MOSFETs are produced using

Fairchild Semiconductor's advanced PowerTrench process that

has been tailored to minimize the on-state resistance and yet

maintain superior switching performance.

High performance trench technology for extremely low

R_DS(ON)

SuperSOT^TM-8 package: small footprint (40% less than

SO-8); low profile(1mmthick); maximum power

comparable to SO-8.

These devices are well suited for portable electronics

applications: load switching and power management, battery

charging circuits, and DC/DC conversion.

SuperSOT^TM-8

SuperSOT^TM-6

SO-8

SOIC-16

SOT-23

SOT-223

SuperSOT^TM-8

Absolute Maximum Ratings T_A= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

FDR8308P

-20

Units

Drain-Source Voltage

Gate-Source Voltage

Draint Current - Continuous

- Pulsed

±8

(Note 1)

-3.2

-20

P_D

Maximum Power Dissipation

0.8

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_q_JA

R_q_JC

Thermal Resistance, Junction-to-Ambient (Note 1)

Thermal Resistance, Junction-to-Case

156

°C/W

(Note 1)

FDR8308P Rev.C

12 3 4 5 6 7 8

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