FDR840

更新时间： 2024-09-15 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	80K
描述
P-Channel 2.5V Specified PowerTrench MOSFET

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数据手册

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FDR840 数据手册

December 2000

FDR840P

P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET uses a rugged

gate PowerTrench process. It has been optimized for

power management applications with a wide range of

gate drive voltage (2.5V – 12V).

• –10 A, –20 V. R_DS(ON)= 12 mΩ @ V_GS= –4.5 V

R_DS(ON)= 17.5 mΩ @ V_GS= –2.5 V

• Fast switching speed.

Applications

• High performance trench technology for extremely

• Power management

• Load switch

low R_DS(ON)

• High power and current handling capability

• Battery protection

SuperSOT^TM-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

Gate-Source Voltage

± 12

–10

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

–50

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.8

P_D

1.0

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_θJA

Thermal Resistance, Junction-to-Case

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDR840P

13’’

12mm

2500 units

FDR840P Rev C1(W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

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