Datasheet > FDR6580_01

FDR6580_01

更新时间： 2024-11-06 03:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	87K
描述
N-Channel 2.5V Specified PowerTrench MOSFET

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数据手册

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FDR6580_01 数据手册

July 2001

FDR6580

N-Channel 2.5V Specified PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low R_DS(ON)in a small package.

11.2 A, 20 V. R_DS(ON)= 9 mW @ V_GS= 4.5 V

R_DS(ON)= 11 mW @ V_GS= 2.5 V

High performance trench technology for extremely

low R_DS(ON)

Applications

High power and current handling capability in a

smaller footprint than SO8

Synchronous rectifier

DC/DC converter

SuperSOT^TM-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

±12

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

11.2

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.8

P_D

1.0

(Note 1c)

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

R_qJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDR6580

13’’

12mm

2500 units

FDR6580 Rev C(W)

Ó2001 Fairchild Semiconductor Corporation

12 3 4 5

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