Datasheet > FDR751ET3G

FDR751ET3G

更新时间： 2024-09-17 01:15:11

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	40K
描述
SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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FDR751ET3G 数据手册

SEMICONDUCTOR

FDR751E

TECHNICAL DATA

SCHOTTKYBARRIERDIODE

Features

(1)Small surface mounting type SC-79/SOD-523

(2)Low reverse current and low forward voltage.

(3)High reliability

Construction

Silicon epitaxial planar

We declare that the material of product

compliance with RoHS requirements.

CATHODE

ANODE

MAXIMUM RATINGS (T_A= 25 C)

Parameter

Peak reverse voltage

DC reverse voltage

Symbol

V_RM

V_R

Limits

Unit

Mean rectifying current

Peak forward surge current

Junction temperature

Storage temperature

I_O

I_FSM

T_j

200

125

T_stg

-40~+125

DEVICE MARKING

FDR751T1G= 5

ELECTRICAL CHARACTERISTICS(T_A=25 C)

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

Forward voltage

V_F

I_R

0.37

I_F=1mA

Reverse current

=30V

V_R

V_R=1V,f=1MHz

2.0

0.5

µA

Capacitance between terminals

C_T

Ordering Information

Device

Marking

Shipping

3000/Tape&Reel

FDR751ET1G

FDR751ET3G

10000/Tape&Reel

2009. 6. 25

Revision No : 0

1/3

12 3

中文翻译

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