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FDMS8662 PDF预览

FDMS8662

更新时间: 2024-09-25 03:36:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 211K
描述
N-Channel PowerTrench㈢ MOSFET 30V, 49A, 2.0mヘ

FDMS8662 数据手册

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November 2007  
FDMS8662  
tm  
N-Channel PowerTrench® MOSFET  
30V, 49A, 2.0mΩ  
Features  
General Description  
„ Max rDS(on) = 2.0mat VGS = 10V, ID = 28A  
„ Max rDS(on) = 3.0mat VGS = 4.5V, ID = 24A  
The FDMS8662 has been designed to minimize losses in power  
conversion application. Advancements in both silicon and  
package technologies have been combined to offer the lowest  
„ Advanced Package and Silicon combination  
rDS(on) while maintaining excellent switching performance.  
for low rDS(on) and high efficiency  
Applications  
„ MSL1 robust package design  
„ RoHS Compliant  
„ Low Side for Synchronous Buck to Power Core Processor  
„ Secondary Side Synchronous Rectifier  
„ Low Side Switch in POL DC/DC Converter  
„ Oring FET/ Load Switch  
Pin 1  
S
S
S
G
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
D
D
D
D
Power 56 (Bottom View)  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
30  
±20  
V
V
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25°C  
C = 25°C  
49  
T
159  
ID  
A
TA = 25°C  
(Note 1a)  
(Note 3)  
28  
-Pulsed  
200  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
726  
mJ  
W
TC = 25°C  
TA = 25°C  
83  
PD  
Power Dissipation  
(Note 1a)  
2.5  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
1.5  
50  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
12mm  
Quantity  
FDMS8662  
FDMS8662  
Power 56  
13’’  
3000units  
1
©2007 Fairchild Semiconductor Corporation  
FDMS8662 Rev.C1  
www.fairchildsemi.com  

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