Datasheet > FDMS3572

FDMS3572

更新时间： 2024-11-08 11:12:47

品牌	Logo	应用领域
安森美 - ONSEMI		脉冲光电二极管晶体管
页数	文件大小	规格书
9页	632K
描述
N 沟道，UltraFET Trench® MOSFET，80V，22A，16.5mΩ

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FDMS3572 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-N8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	0.98	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	80 V	最大漏极电流 (Abs) (ID)：	22 A
最大漏极电流 (ID)：	8.8 A	最大漏源导通电阻：	0.029 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-N8
JESD-609代码：	e4	湿度敏感等级：	1
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	78 W
最大脉冲漏极电流 (IDM)：	50 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	端子形式：	NO LEAD
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON	Base Number Matches：	1

FDMS3572 数据手册

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

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与FDMS3572相关器件

型号	品牌	获取价格	描述	数据表
FDMS3572_07	FAIRCHILD	获取价格	N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 1
FDMS3600AS	ONSEMI	获取价格	25V PowerTrench® 功率级非对称双 N 沟道 MOSFET
FDMS3600S	FAIRCHILD	获取价格	PowerTrenchÂ® Power Stage 25 V Asymmetric Dua
FDMS3600S	ONSEMI	获取价格	不对称双 N 沟道 MOSFET，PowerTrench® 功率级，25V
FDMS3602AS	ONSEMI	获取价格	不对称双 N 沟道，PowerTrench® 功率级 MOSFET，25V
FDMS3602S	FAIRCHILD	获取价格	25 V Asymmetric Dual N-Channel MOSFET Features
FDMS3602S	ONSEMI	获取价格	不对称双 N 沟道 MOSFET，PowerTrench® 功率级，25V
FDMS3604AS	FAIRCHILD	获取价格	PowerTrenchÂ® Power Stage 30 V Asymmetric Dua
FDMS3604S	ONSEMI	获取价格	不对称双 N 沟道，PowerTrench® 功率级 MOSFET，30V
FDMS3606AS	ONSEMI	获取价格	30V，不对称双 N 沟道 MOSFET，PowerTrench® 功率级

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