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FDMS3606AS PDF预览

FDMS3606AS

更新时间: 2024-09-22 11:13:11
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
15页 1018K
描述
30V,不对称双 N 沟道 MOSFET,PowerTrench® 功率级

FDMS3606AS 技术参数

是否无铅: 不含铅生命周期:Lifetime Buy
包装说明:FLATPACK, R-PQFP-N7Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:0.98外壳连接:DRAIN SOURCE
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):40 A最大漏极电流 (ID):1.3 A
最大漏源导通电阻:0.008 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):75 pFJESD-30 代码:R-PQFP-N7
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:7
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLATPACK峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMS3606AS 数据手册

 浏览型号FDMS3606AS的Datasheet PDF文件第2页浏览型号FDMS3606AS的Datasheet PDF文件第3页浏览型号FDMS3606AS的Datasheet PDF文件第4页浏览型号FDMS3606AS的Datasheet PDF文件第5页浏览型号FDMS3606AS的Datasheet PDF文件第6页浏览型号FDMS3606AS的Datasheet PDF文件第7页 
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