Datasheet > FDMS3624S

FDMS3624S

更新时间： 2024-02-06 17:04:09

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
12页	395K
描述
PowerTrenchÂ® Power Stage 25V Asymmetric Dual N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDMS3624S 数据手册

December 2011

FDMS3624S

PowerTrench^®Power Stage

25V Asymmetric Dual N-Channel MOSFET

Features

General Description

Q1: N-Channel

This device includes two specialized N-Channel MOSFETs in a

dual PQFN package. The switch node has been internally

connected to enable easy placement and routing of synchronous

buck converters. The control MOSFET (Q1) and synchronous

SyncFET (Q2) have been designed to provide optimal power

efficiency.

Max r_DS(on)= 5.0 mΩ at V_GS= 10 V, I_D= 17.5 A

Max r_DS(on)= 5.7 mΩ at V_GS= 4.5 V, I_D= 16 A

Q2: N-Channel

Max r_DS(on)= 1.8 mΩ at V_GS= 10 V, I_D= 30 A

Max r_DS(on)= 2.2 mΩ at V_GS= 4.5 V, I_D= 27 A

Applications

Low inductance packaging shortens rise/fall times, resulting in

lower switching losses

Computing

MOSFET integration enables optimum layout for lower circuit

inductance and reduced switch node ringing

Communications

General Purpose Point of Load

Notebook VCORE

RoHS Compliant

Pin 1

PHASE

(S1/D2)

Bottom

Top

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Units

Drain to Source Voltage

Gate to Source Voltage

(Note 4)

T_C= 25 °C

T_A= 25 °C

±12

Drain Current

-Continuous (Package limited)

-Continuous

I_D

17.5^1a

30^1b

120

2.5^1b

1.0^1d

-Pulsed

E_AS

Single Pulse Avalanche Energy

(Note 3)

T_A= 25 °C

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

2.2^1a

1.0^1c

P_D

T_J, T_STG

-55 to +150

°C

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance, Junction to Ambient

57^1a

125^1c

3.0

50^1b

120^1d

2.2

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ”

Tape Width

Quantity

08OD

07OD

FDMS3624S

Power 56

12 mm

3000 units

FDMS3624S Rev.C2

www.fairchildsemi.com

12 3 4 5 6 7...12

中文翻译

下载PDF

与FDMS3624S相关器件

型号	品牌	获取价格	描述	数据表
FDMS3626S	ONSEMI	获取价格	25V非对称双N沟道MOSFET PowerTrench®功率级
FDMS3660AS	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-
FDMS3660AS	ONSEMI	获取价格	不对称双 N 沟道，PowerTrench® 功率级 MOSFET，30V
FDMS3660S	FAIRCHILD	获取价格	PowerTrenchÂ® Power Stage Asymmetric Dual N-C
FDMS3660S	ONSEMI	获取价格	不对称双 N 沟道，PowerTrench® 功率级 MOSFET，30V
FDMS3662	FAIRCHILD	获取价格	N-Channel Power Trench㈢ MOSFET 100V, 49A, 14.
FDMS3662	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，100V，39A，14.8mΩ
FDMS3664S	FAIRCHILD	获取价格	PowerTrenchÂ® Power Stage Asymmetric Dual N-C
FDMS3664S	ONSEMI	获取价格	不对称双 N 沟道 PowerTrench® 功率级 MOSFET 30V
FDMS3668S	FAIRCHILD	获取价格	PowerTrenchÂ® Power Stage Asymmetric Dual N-C