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FDMA1027P PDF预览

FDMA1027P

更新时间: 2024-01-24 05:12:18
品牌 Logo 应用领域
安森美 - ONSEMI PC开关光电二极管晶体管
页数 文件大小 规格书
7页 231K
描述
-20V双P沟道PowerTrench® MOSFET

FDMA1027P 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:16 weeks风险等级:1.06
Samacsys Description:MOSFET MLP 2X2 DUAL PCH POWER TRENCH外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):2.2 A最大漏极电流 (ID):2.2 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-229VCCCJESD-30 代码:S-PDSO-N6
JESD-609代码:e4湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.4 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

FDMA1027P 数据手册

 浏览型号FDMA1027P的Datasheet PDF文件第1页浏览型号FDMA1027P的Datasheet PDF文件第2页浏览型号FDMA1027P的Datasheet PDF文件第3页浏览型号FDMA1027P的Datasheet PDF文件第4页浏览型号FDMA1027P的Datasheet PDF文件第5页浏览型号FDMA1027P的Datasheet PDF文件第6页 
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