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FDMA1027P PDF预览

FDMA1027P

更新时间: 2024-02-10 23:03:14
品牌 Logo 应用领域
安森美 - ONSEMI PC开关光电二极管晶体管
页数 文件大小 规格书
7页 231K
描述
-20V双P沟道PowerTrench® MOSFET

FDMA1027P 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:16 weeks风险等级:1.06
Samacsys Description:MOSFET MLP 2X2 DUAL PCH POWER TRENCH外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):2.2 A最大漏极电流 (ID):2.2 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-229VCCCJESD-30 代码:S-PDSO-N6
JESD-609代码:e4湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.4 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

FDMA1027P 数据手册

 浏览型号FDMA1027P的Datasheet PDF文件第1页浏览型号FDMA1027P的Datasheet PDF文件第2页浏览型号FDMA1027P的Datasheet PDF文件第3页浏览型号FDMA1027P的Datasheet PDF文件第4页浏览型号FDMA1027P的Datasheet PDF文件第6页浏览型号FDMA1027P的Datasheet PDF文件第7页 
FDMA1027P  
TYPICAL CHARACTERISTICS (continued)  
5
4
3
2
1
0
700  
600  
ID = 3.0 A  
f = 1 MHz  
VGS = 0 V  
VDS = 5 V  
500  
15 V  
400  
C
iss  
10 V  
300  
200  
Coss  
100  
0
Crss  
0
1
2
3
4
5
0
4
8
12  
16  
20  
Q , GATE CHARGE (nC)  
g
V , DRAIN TO SOURCE VOLTAGE (V)  
DS  
Figure 7. Gate Charge Characteristics  
Figure 8. Capacitance Characteristics  
100  
10  
1
50  
40  
30  
20  
10  
0
SINGLE PULSE  
R
JA = 173oC/W  
T
A = 25oC  
100us  
RDS(ON) LIMIT  
1ms  
10ms  
100ms  
1s  
10s  
DC  
VGS = 4.5 V  
0.1  
SINGLE PULSE  
R
JA = 173oC/W  
T
A = 25oC  
0.01  
0.0001 0.001 0.01 0.1  
1
10  
100 1000  
0.01  
0.1  
1
10  
100  
V , DRAINSOURCE VOLTAGE (V)  
DS  
t, TIME (s)  
Figure 9. Maximum Safe Operating Area  
Figure 10. Single Pulse Maximum Power  
Dissipation  
1
0.1  
0.01  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
10  
t, TIME (s)  
Figure 11. Transient Thermal Response Curve  
Thermal characterization performed using the conditions described in Note 1b.  
Transient thermal response will change depending on the circuit board design.  
POWERTRENCH is a registered trademark and MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or  
subsidiaries in the United States and/or other countries.  
www.onsemi.com  
5

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