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FDFM2N111 PDF预览

FDFM2N111

更新时间： 2024-11-17 11:15:19
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管肖特基二极管
页数 文件大小 规格书
8页 382K
描述
20V集成式P沟道PowerTrench® MOSFET和肖特基二极管

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中文翻译

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FDFM2N111 技术参数

是否无铅：不含铅生命周期：Lifetime Buy
包装说明：SMALL OUTLINE, S-XDSO-N6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：1.01
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：4 A
最大漏极电流 (ID)：4 A最大漏源导通电阻：0.1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：S-XDSO-N6
JESD-609代码：e4湿度敏感等级：1
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1.7 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Nickel/Palladium (Ni/Pd)
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDFM2N111 数据手册

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中文翻译

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