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FDFMA2P857_08

更新时间： 2024-11-16 03:36:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 肖特基二极管
页数 文件大小 规格书
8页 611K
描述
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ

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FDFMA2P857_08 数据手册

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March 2008  
FDFMA2P857  
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode  
–20V, –3.0A, 120mΩ  
Features  
General Description  
This device is designed specifically as a single package solution  
for the battery charge switch in cellular handset and other ultra-  
portable applications. It features a MOSFET with low on-state  
resistance and an independently connected low forward voltage  
schottky diode for minimum conduction losses.  
MOSFET:  
„ Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A  
„ Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A  
„ Max rDS(on) = 240mΩ at VGS = –1.8V, ID = –1.0A  
The MicroFET 2x2 package offers exceptional thermal  
performance for it’s physical size and is well suited to linear  
mode applications.  
Schottky:  
„ VF < 0.54V @ 1A  
„ Low profile - 0.8 mm maximum - in the new pack-  
age MicroFET 2x2 mm  
„ RoHS Compliant  
Pin 1  
A
D
NC  
A
6
C
G
S
1
NC  
D
5
4
2
3
C
S
G
MicroFET 2x2  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDSS  
VGSS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
20  
V
V
±8  
(Note 1a)  
–3  
ID  
A
–6  
Power Dissipation  
Power Dissipation  
(Note 1a)  
(Note 1b)  
1.4  
PD  
W
0.7  
TJ, TSTG  
VRRM  
IO  
Operating and Storage Junction Temperature Range  
Schottky Repetitive Peak Reverse Voltage  
Schottky Average Forward Current  
–55 to +150  
°C  
V
30  
1
A
Thermal Characteristics  
RθJA  
RθJA  
RθJA  
RθJA  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1b)  
(Note 1c)  
(Note 1d)  
86  
173  
86  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
°C/W  
140  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
7’’  
Tape Width  
8mm  
Quantity  
.857  
FDFMA2P857  
MicroFET 2x2  
3000 units  
1
©2008 Fairchild Semiconductor Corporation  
FDFMA2P857 Rev.B1  
www.fairchildsemi.com  
12345678

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