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FDFMA3N109 PDF预览

FDFMA3N109

更新时间： 2024-11-17 11:14:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 513K
描述
30V Integrated N-Channel PowerTrench®MOSFET and Schottky Diode

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中文翻译

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FDFMA3N109 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, S-PDSO-N6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.97
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：2.9 A
最大漏极电流 (ID)：2.9 A最大漏源导通电阻：0.123 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：30 pF
JESD-30 代码：S-PDSO-N6湿度敏感等级：1
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1.5 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag)
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDFMA3N109 数据手册

 浏览型号FDFMA3N109的Datasheet PDF文件第2页浏览型号FDFMA3N109的Datasheet PDF文件第3页浏览型号FDFMA3N109的Datasheet PDF文件第4页浏览型号FDFMA3N109的Datasheet PDF文件第5页浏览型号FDFMA3N109的Datasheet PDF文件第6页浏览型号FDFMA3N109的Datasheet PDF文件第7页 
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