Datasheet > FDFM2P110_0508

FDFM2P110_0508

更新时间： 2024-10-01 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		肖特基二极管
页数	文件大小	规格书
7页	278K
描述
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode

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FDFM2P110_0508 数据手册

August 2005

FDFM2P110

Integrated P-Channel PowerTrench MOSFET and Schottky Diode

General Description

Applications

FDFM2P110 combines the exceptional performance of

Fairchild's PowerTrench MOSFET technology with a very

low forward voltage drop Schottky barrier rectifier in a

MicroFET package.

Buck Boost

Features

This device is designed specifically as a single package

solution for Buck Boost. It features a fast switching, low

gate charge MOSFET with very low on-state resistance.

-3.5 A, -20 V R_DS(ON)= 140mΩ @ V_GS= -4.5 V

R_DS(ON)= 200mΩ @ V_GS= -2.5 V

Low Profile - 0.8 mm maximun - in the new package

MicroFET 3x3 mm

PIN 1

C/D

TOP

BOTTOM

MLP 3x3

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

Ratings

-20

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current -Continuous

-Pulsed

±12

(Note 1a)

-3.5

I_D

-10

V_RRM

I_O

Schottky Repetitive Peak Reverse voltage

Schottky Average Forward Current

Power dissipation (Steady State)

0.8

(Note 1a)

(Note 1b)

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

^oC

Thermal Characteristics

R_θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

^oC/W

Thermal Resistance, Junction-to-Ambient

145

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

3000 units

2P110

FDFM2P110

7inch

12mm

FDFM2P110 Rev. C4 (W)

12 3 4 5 6 7

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