Datasheet > FDFMA2P853

FDFMA2P853

更新时间： 2024-01-19 01:55:28

品牌	Logo	应用领域
安森美 - ONSEMI		PC 开关光电二极管晶体管肖特基二极管
页数	文件大小	规格书
9页	537K
描述
集成式 P 沟道 Power Trench® MOSFET 和肖特基二极管 -20V，-3.0A，120mΩ

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FDFMA2P853 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	2 X 2 MM, ROHS COMPLIANT, THIN, MICRO-6
针数：	6	Reach Compliance Code：	unknown
风险等级：	5.32	Is Samacsys：	N
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏源导通电阻：	0.12 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PDSO-C6	JESD-609代码：	e4
湿度敏感等级：	1	元件数量：	1
端子数量：	6	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL	最大脉冲漏极电流 (IDM)：	6 A
认证状态：	COMMERCIAL	表面贴装：	YES
端子面层：	NICKEL PALLADIUM GOLD	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDFMA2P853 数据手册

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与FDFMA2P853相关器件

型号	品牌	描述	获取价格	数据表
FDFMA2P853_06	FAIRCHILD	Integrated P-Channel PowerTrench㈢ MOSFET and	获取价格
FDFMA2P853_08	FAIRCHILD	Integrated P-Channel PowerTrench㈢ MOSFET and	获取价格
FDFMA2P853T	FAIRCHILD	Integrated P-Channel PowerTrench® MOSFET and	获取价格
FDFMA2P857	FAIRCHILD	Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.0A, 120mohm	获取价格
FDFMA2P857_08	FAIRCHILD	Integrated P-Channel PowerTrench㈢ MOSFET and	获取价格
FDFMA2P859T	FAIRCHILD	Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20 V, -3.0 A, 120 m	获取价格

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