Datasheet > FDD5614P_05

FDD5614P_05

更新时间： 2024-11-20 04:18:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	102K
描述
60V P-Channel PowerTrench㈢ MOSFET

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中文翻译

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FDD5614P_05 数据手册

May 2005

FDD5614P

60V P-Channel PowerTrench^®MOSFET

General Description

Features

This 60V P-Channel MOSFET uses Fairchild’s high

voltage PowerTrench process. It has been optimized

for power management applications.

• –15 A, –60 V. R_DS(ON)= 100 mΩ @ V_GS= –10 V

R_DS(ON)= 130 mΩ @ V_GS= –4.5 V

• Fast switching speed

Applications

• High performance trench technology for extremely

• DC/DC converter

• Power management

• Load switch

low R_DS(ON)

• High power and current handling capability

TO-252

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–60

Units

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

– Pulsed

(Note 3)

(Note 1a)

(Note 1)

–15

–45

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

3.8

1.6

T_J, T_STG

Operating and Storage Junction Temperature Range

°C

–55 to +175

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

3.5

R_θJC

R_θJA

°C/W

Thermal Resistance, Junction-to-Ambient

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD5614P

13’’

12mm

2500 units

FDD5614P Rev C1(W)

12 3 4 5 6

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