Datasheet > FDD5670_11

FDD5670_11

更新时间： 2024-11-20 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	144K
描述
60V N-Channel PowerTrenchÂ® MOSFET

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FDD5670_11 数据手册

November 2011

FDD5670

60V N-Channel PowerTrench^®MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R^{DS( ON)}and fast switching speed.

extremely low R_DS(ON)in a small package.

• 52 A, 60 V

R_DS(ON)= 15 mΩ @ V_GS= 10 V

R_DS(ON)= 18 mΩ @ V_GS= 6 V

• Low gate charge

• Fast switching

Applications

• High performance trench technology for extremely

low R_DS(ON)

• DC/DC converter

• Motor drives

TO-252

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

Gate-Source Voltage

150

I_D

Drain Current – Continuous

– Pulsed

Power Dissipation for Single Operation

(Note 3)

(Note 1a)

(Note 1)

P_D

(Note 1a)

(Note 1b)

3.8

1.6

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

1.8

R_θJC

R_θJA

°C/W

Thermal Resistance, Junction-to-Ambient

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD5670

13’’

16mm

2500 units

FDD5670 Rev B2

12 3 4 5

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与FDD5670_11相关器件

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FDD5680	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
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