Datasheet > FDD4N60NZ

FDD4N60NZ

更新时间： 2024-11-20 12:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	321K
描述
FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 ï

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数据手册

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FDD4N60NZ 数据手册

March 2013

FDD4N60NZ

N-Channel UniFET II MOSFET

600 V, 3.4 A, 2.5 

Features

Description

•

R_DS(on)= 1.9  (Typ.) @ V_GS= 10 V, I_D= 1.7 A

Low Gate Charge (Typ. 8.3 nC)

Low C_rss(Typ. 3.7 pF)

UniFET^TMII MOSFET is Fairchild Semiconductor^®’s high volt-

age MOSFET family based on advanced planar stripe and

DMOS technology. This advanced MOSFET family has the

smallest on-state resistance among the planar MOSFET, and

also provides superior switching performance and higher ava-

lanche energy strength. In addition, internal gate-source ESD

diode allows UniFET^TMII MOSFET to withstand over 2kV HBM

surge stress. This device family is suitable for switching power

converter applications such as power factor correction (PFC), flat

panel display (FPD) TV power, ATX and electronic lamp ballasts.

100% Avalanche Tested

Improved dv/dt Capability

•

ESD Improved Capability

RoHS Compliant

Applications

•

LCD/LED/PDP TV

Lighting

Uninterruptible Power Supply

D-PAK

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FDD4N60NZ

Unit

Drain to Source Voltage

Gate to Source Voltage

600

±25

- Continuous (T_C= 25^oC)

- Continuous (T_C= 100^oC)

- Pulsed

3.4

I_D

Drain Current

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 1)

(Note 3)

13.6

179.2

3.4

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

11.4

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

114

P_D

Power Dissipation

0.9

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Unit

FDD4N60NZ

R_JC

R_JA

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

1.1

^oC/W

110

www.fairchildsemi.com

FDD4N60NZ Rev. C0

12 3 4 5 6 7 8

中文翻译

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