Datasheet > FDD5614P

FDD5614P

更新时间： 2024-11-21 11:09:59

品牌	Logo	应用领域
安森美 - ONSEMI		PC 开关脉冲晶体管
页数	文件大小	规格书
7页	359K
描述
60V，P 沟道，PowerTrench® MOSFET，-15A，100mΩ

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FDD5614P 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH⁾

60 V

FDD5614P

General Description

P−Channel MOSFET

This 60 V P−Channel MOSFET uses onsemi’s high voltage

POWERTRENCH process. It has been optimized for power

management applications.

Features

• −15 A, −60 V

♦ R

= 100 mW at V = −10 V

DS(ON)

= 130 mW at V = −4.5 V

DS(ON)

DPAK3 (TO−252 3 LD)

CASE 369AS

• Fast Switching Speed

• High Performance Trench Technology for Extremely Low R

• High Power and Current Handling Capability

• This is a Pb−Free Device

DS(ON)

MARKING DIAGRAM

$Y&Z&3&K

FDD

5614P

Applications

• DC/DC Converter

• Power Management

• Load Switch

FDD5614P = Specific Device Code

= onsemi Logo

= Assembly Plant Code

= 3−Digit Date Code

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

VDSS

Parameter

Drain−Source Voltage

Gate−Source Voltage

Drain Current − Continuous (Note 3)

− Pulsed (Note 1a)

Ratings

−60

Unit

= 2−Digits Lot Run Traceability Code

VGSS

ORDERING INFORMATION

−15

−45

†

Device

FDD5614P

Package

Shipping

Power Dissipation for Single Operation

TO−252−3

(Pb−Free)

2500 /

(Note 1)

(Note 1a)

(Note 1b)

3.8

1.6

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

T , T

Operating and Storage Junction

Temperature Range

−55 to +175

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

November, 2021 − Rev. 3

FDD5614P/D

12 3 4 5 6 7

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与FDD5614P相关器件

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FDD5614P_05	FAIRCHILD	获取价格	60V P-Channel PowerTrench㈢ MOSFET
FDD5614P_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal
FDD5670	FAIRCHILD	获取价格	60V N-Channel PowerTrenchTM MOSFET
FDD5670	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，52A，15mΩ
FDD5670_11	FAIRCHILD	获取价格	60V N-Channel PowerTrenchÂ® MOSFET
FDD5670_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 21A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
FDD5680	FAIRCHILD	获取价格	N-Channel, PowerTrench⑩ MOSFET
FDD5680	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，38A，21mΩ
FDD5680	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
FDD5680_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 38A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met