Datasheet > FDD4N60NZ_12

FDD4N60NZ_12

更新时间： 2024-11-18 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	585K
描述
N-Channel MOSFET 600V, 3.4A, 2.5

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FDD4N60NZ_12 数据手册

July 2012

UniFET-II

FDD4N60NZ

N-Channel MOSFET

600V, 3.4A, 2.5ꢀ

Features

Description

•

= 1.9ꢀ ( Typ.)@ V = 10V, I = 1.7A

These N-Channel enhancement mode power field effect

sistors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

tran-

DS(on)

Low Gate Charge ( Typ. 8.3nC)

Low C ( Typ. 3.7pF)

rss

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

formance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switching mode power supplies and active power factor

correction.

per-

Fast Switching

100% Avalanche Tested

Improved dv/dt Capability

•

ESD Improved Capability

RoHS Compliant

D-PAK

MOSFET Maximum Ratings T = 25 C unless otherwise noted*

Symbol

Parameter

FDD4N60NZ

Units

Drain to Source Voltage

Gate to Source Voltage

600

±25

DSS

GSS

-Continuous (T = 25 C)

3.4

Drain Current

-Continuous (T = 100 C)

Drain Current

- Pulsed

(Note 1)

(Note 2)

(Note 1)

(Note 3)

13.6

179.2

3.4

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

11.4

V/ns

dv/dt

(T = 25 C)

114

Power Dissipation

- Derate above 25 C

0.9

W/ C

T , T

Operating and Storage Temperature Range

-55 to +150

STG

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Units

FDD4N60NZ

1.1

θJC

θJA

C/W

110

FDD4N60NZ Rev.C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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