Datasheet > FDD5353

FDD5353

更新时间： 2024-10-31 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	513K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:10.7A;Vgs(th)(V):±20;漏源导通电阻:12mΩ@10V

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FDD5353 数据手册

FDD5353

60VN-Channel MOSFET

UMW

General Description

This N-Channel MOSFET is produced using process that

has been especially tailored to minimize the on-state

resistance and yet maintain superior switching performance.

Application

Inverter

•

Synchronous rectifier

Primary switch

Features

•

DSS

= 60V

I (at V =10V)10.7A

•

(at V =10V) < 12.3mΩ

DS(ON)

•

(at V = 4.5V) < 15.4mΩ

DS(ON)

RoHS Compliant

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Continuous

±20

T_C= 25°C

T_A= 25°C

I_D

(Note 1a)

(Note 3)

11.5

-Pulsed

100

E_AS

Single Pulse Avalanche Energy

Power Dissipation

253

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

(Note 1a)

3.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_JC

R_JA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.8

°C/W

(Note 1a)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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