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FDD3N40TM PDF预览

FDD3N40TM

更新时间： 2024-11-30 11:09:59
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
11页 542K
描述
功率 MOSFET，N 沟道，UniFETTM，400V，2A，3.4Ω，DPAK

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中文翻译

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FDD3N40TM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.95
Is Samacsys：N其他特性：FAST SWITCHING
雪崩能效等级（Eas）：46 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：400 V
最大漏极电流 (Abs) (ID)：2 A最大漏极电流 (ID)：2 A
最大漏源导通电阻：3.4 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：30 W
最大脉冲漏极电流 (IDM)：8 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDD3N40TM 数据手册

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中文翻译

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FDD3N40TM 替代型号

型号 品牌 替代类型 描述 数据表
FDD3N40TF FAIRCHILD

功能相似

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