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FDD4685

更新时间： 2024-11-25 11:13:43
品牌 Logo 应用领域
安森美 - ONSEMI 脉冲晶体管
页数 文件大小 规格书
8页 595K
描述
P 沟道 PowerTrench® MOSFET，-40V，-23A，27mΩ

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中文翻译

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FDD4685 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：DPAK-3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.67
Is Samacsys：N雪崩能效等级（Eas）：121 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：40 A
最大漏极电流 (ID)：8.4 A最大漏源导通电阻：0.042 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：69 W
最大脉冲漏极电流 (IDM)：100 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

FDD4685 数据手册

 浏览型号FDD4685的Datasheet PDF文件第2页浏览型号FDD4685的Datasheet PDF文件第3页浏览型号FDD4685的Datasheet PDF文件第4页浏览型号FDD4685的Datasheet PDF文件第5页浏览型号FDD4685的Datasheet PDF文件第6页浏览型号FDD4685的Datasheet PDF文件第7页 
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中文翻译

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FDD4685 替代型号

型号 品牌 替代类型 描述 数据表
FDD4685_F085 FAIRCHILD

功能相似

 Power Field-Effect Transistor, 32A I(D), 40V, 0.027ohm, 1-Element, P-Channel, Silicon, Met

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