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FDD4243 PDF预览

FDD4243

更新时间: 2024-11-30 17:15:43
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
6页 668K
描述
种类:P-Channel;漏源电压(Vdss):-40V;持续漏极电流(Id)(在25°C时):-14A;Vgs(th)(V):±20;漏源导通电阻:44mΩ@-10V

FDD4243 数据手册

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R
UMW  
FDD4243  
P-Channel MOSFET  
Features  
VDS (V) =-40V  
„
„
„
RDS(ON) < 44mΩ (VGS =-10V)  
RDS(ON) < 64mΩ (VGS =-4.5V)  
„ High performance trench technology for extremely low rDS(on)  
„ RoHS Compliant  
General Description  
This P-Channel MOSFET has been produced technology to  
deliver low rDS(on) and optimized Bvdss capability to offer  
superior performance benefit in the applications.  
S
Application  
G
„ Inverter  
„ Power Supplies  
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
-40  
V
V
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC= 25°C  
TC= 25°C  
TA= 25°C  
-14  
(Note 1)  
-24  
ID  
A
(Note 1a)  
-6.7  
-Pulsed  
-60  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
(Note 3)  
84  
mJ  
W
TC= 25°C  
42  
3
PD  
Power Dissipation  
(Note 1a)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
3.0  
40  
°C/W  
(Note 1a)  
www.umw-ic.com  
1
UTD Semiconductor Co.,Limited  

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种类:P-Channel;漏源电压(Vdss):-40V;持续漏极电流(Id)(在25°C