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FDD4141 PDF预览

FDD4141

更新时间: 2024-11-29 04:18:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
6页 237K
描述
P-Channel PowerTrench㈢ MOSFET

FDD4141 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, TO-252, D-PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.19
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:729608Samacsys Pin Count:3
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:DPAK3 (TO?252 3 LD) CASE 369AS ISSUE O_1Samacsys Released Date:2018-12-27 15:58:59
Is Samacsys:N雪崩能效等级(Eas):337 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):58 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.0187 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):69 W最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDD4141 数据手册

 浏览型号FDD4141的Datasheet PDF文件第2页浏览型号FDD4141的Datasheet PDF文件第3页浏览型号FDD4141的Datasheet PDF文件第4页浏览型号FDD4141的Datasheet PDF文件第5页浏览型号FDD4141的Datasheet PDF文件第6页 
July 2007  
FDD4141  
tm  
P-Channel PowerTrench® MOSFET  
-40V, -50A, 12.3mΩ  
Features  
General Description  
„ Max rDS(on) = 12.3mat VGS = -10V, ID = -12.7A  
„ Max rDS(on) = 18.0mat VGS = -4.5V, ID = -10.4A  
„ High performance trench technology for extremely low rDS(on)  
„ RoHS Compliant  
This P-Channel MOSFET has been produced using Fairchild  
Semiconductor’s proprietary PowerTrench® technology to  
deliver low rDS(on) and optimized Bvdss capability to offer  
superior performance benefit in the applications. and optimized  
switching performance capability reducing power dissipation  
losses in converter/inverter applications.  
Applications  
„ Inverter  
„ Power Supplies  
S
D
G
G
S
D-PAK  
(TO-252)  
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
-40  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25°C  
C = 25°C  
-50  
T
-58  
ID  
A
TA = 25°C  
(Note 1a)  
(Note 3)  
-10.8  
-100  
337  
-Pulsed  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
mJ  
W
TC = 25°C  
TA = 25°C  
69  
PD  
Power Dissipation  
(Note 1a)  
2.4  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
1.8  
52  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13’’  
Tape Width  
12mm  
Quantity  
FDD4141  
FDD4141  
D-PAK (TO-252)  
2500 units  
www.fairchildsemi.com  
©2007 Fairchild Semiconductor Corporation  
FDD4141 Rev.C  
1

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