Datasheet > FDD4243_10

FDD4243_10

更新时间： 2024-11-29 12:23:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	272K
描述
P-Channel PowerTrenchÂ® MOSFET -40V, -14A, 64mÎ©

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FDD4243_10 数据手册

October 2010

FDD4141_F085

P-Channel PowerTrench^®MOSFET

-40V, -50A, 12.3mΩ

Features

General Description

Max r_DS(on)= 12.3mΩ at V_GS= -10V, I_D= -12.7A

Max r_DS(on)= 18.0mΩ at V_GS= -4.5V, I_D= -10.4A

High performance trench technology for extremely low r_DS(on)

Qualified to AEC Q101

This P-Channel MOSFET has been produced using Fairchild

Semiconductor’s proprietary PowerTrench^®technology to

deliver low r_DS(on)and optimized Bvdss capability to offer

superior performance benefit in the applications. and optimized

switching performance capability reducing power dissipation

losses in converter/inverter applications.

RoHS Compliant

Applications

Inverter

Power Supplies

D-PAK

TO -252

(TO-252)

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

-40

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

_C= 25°C

-50

-58

I_D

T_A= 25°C

(Note 1a)

(Note 3)

-10.8

-100

337

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

(Note 1a)

2.4

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Maximum Thermal Resistance, Junction to Case

Maximum Thermal Resistance, Junction to Ambient

1.8

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12mm

Quantity

FDD4141

FDD4141_F085

D-PAK (TO-252)

2500 units

www.fairchildsemi.com

FDD4141_F085 Rev.C

12 3 4 5 6

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