Datasheet > FDD4243_07

FDD4243_07

更新时间： 2024-11-29 04:18:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	399K
描述
40V P-Channel PowerTrench㈢ MOSFET

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中文翻译

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数据手册

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FDD4243_07 数据手册

November 2007

FDD4243

40V P-Channel PowerTrench^®MOSFET

-40V, -14A, 44mΩ

Features

General Description

Max r_DS(on)= 44mΩ at V_GS= -10V, I_D= -6.7A

Max r_DS(on)= 64mΩ at V_GS= -4.5V, I_D= -5.5A

High performance trench technology for extremely low r_DS(on)

RoHS Compliant

This P-Channel MOSFET has been produced using Fairchild

Semiconductor’s proprietary PowerTrench^®technology to

deliver low r_DS(on)and optimized Bvdss capability to offer

superior performance benefit in the applications.

Application

Inverter

Power Supplies

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

-40

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

T_A= 25°C

-14

(Note 1)

-24

I_D

(Note 1a)

-6.7

-Pulsed

-60

E_AS

Single Pulse Avalanche Energy

Power Dissipation

(Note 3)

T_C= 25°C

P_D

Power Dissipation

(Note 1a)

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.0

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12mm

Quantity

FDD4243

D-PAK(TO-252)

2500 units

FDD4243 Rev.C1

www.fairchildsemi.com

12 3 4 5 6

中文翻译

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