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FDD4141 PDF预览

FDD4141

更新时间： 2024-11-30 11:14:31
品牌 Logo 应用领域
安森美 - ONSEMI PC开关脉冲晶体管
页数 文件大小 规格书
8页 454K
描述
P 沟道，PowerTrench® MOSFET，-40V，-50A，12.3mΩ

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中文翻译

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FDD4141 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.75
Samacsys Description：Fairchild FDD4141 P-channel MOSFET Transistor, 10.8 A, -40 V, 3-Pin TO-252雪崩能效等级（Eas）：337 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (ID)：50 A
最大漏源导通电阻：0.0123 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：310 pFJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：69 W最大脉冲漏极电流 (IDM)：100 A
认证状态：Not Qualified表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON最大关闭时间（toff）：87 ns
最大开启时间（吨）：32 ns

FDD4141 数据手册

 浏览型号FDD4141的Datasheet PDF文件第2页浏览型号FDD4141的Datasheet PDF文件第3页浏览型号FDD4141的Datasheet PDF文件第4页浏览型号FDD4141的Datasheet PDF文件第5页浏览型号FDD4141的Datasheet PDF文件第6页浏览型号FDD4141的Datasheet PDF文件第7页 
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与FDD4141相关器件

型号 品牌 获取价格 描述 数据表
FDD4141_10 FAIRCHILD

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 		P-Channel PowerTrench® MOSFET -40V, -50A, 12
FDD4141-F085 ONSEMI

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 		P 沟道，PowerTrench® MOSFET，-40V，-50A，12.3mΩ
FDD4141-F085P ONSEMI

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 		P 沟道，PowerTrench® MOSFET，-40V，-50A，12.3mΩ
FDD4243 FAIRCHILD

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 		40V P-Channel PowerTrench MOSFET -40V, -14A, 44mohm
FDD4243 ONSEMI

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 		P 沟道，PowerTrench® MOSFET，-40V，-14A，44mΩ
FDD4243 UMW

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 		种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C
FDD4243_07 FAIRCHILD

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 		40V P-Channel PowerTrench㈢ MOSFET
FDD4243_10 FAIRCHILD

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 		P-Channel PowerTrench® MOSFET -40V, -14A, 64
FDD4243_F085 FAIRCHILD

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 		Power Field-Effect Transistor, 14A I(D), 40V, 0.044ohm, 1-Element, P-Channel, Silicon, Met
FDD4243-F085 ONSEMI

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 		P 沟道，PowerTrench® MOSFET，-40V，-14A，64mΩ

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