Datasheet > FDC5661N-F085

FDC5661N-F085

更新时间： 2024-09-11 11:15:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	392K
描述
N 沟道，PowerTrench® MOSFET，逻辑电平，60V，4A，60mΩ

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数据手册

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FDC5661N-F085 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

Logic Level, POWERTRENCH⁾

60 V, 4 A, 60 mW

FDC5661N-F085

Pin 1

Features

TSOT23−6

CASE 419BL

• R

= 47 mW at V = 10 V, I = 4.3 A

GS D

DS(on)

= 60 mW at V = 4.5 V, I = 4 A

• Typ Q

= 14.5 nC at V = 10 V

MARKING DIAGRAM

g(TOT)

• Low Miller Charge

• UIS Capability

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

XXX MG

XXX = Specific Device Code

= Date Code

= Pb−Free Package

Applications

• DC–DC Converter

• Motor Drives

(Note: Microdot may be in either location)

PIN CONNECTIONS

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain to Source Voltage

Gate to Source Voltage

Symbol

Value

Unit

DSS

Drain Current Continuous (V = 10 V)

4.3

Pulsed

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

1.6

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

Operating and Storage Temperature

T , T

−55 to

+150

°C

STG

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

°C/W

TO−263, 1in Copper Pad Area

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. E of 81 mJ is 100% test at L = 14 mH, I = 3.4 A, Starting T = 25°C

Publication Order Number:

September, 2022 − Rev. 4

FDC5661N−F085/D

12 3 4 5 6 7

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