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FDC6036P-GF077 PDF预览

FDC6036P-GF077

更新时间: 2024-09-14 14:50:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 242K
描述
Transistor

FDC6036P-GF077 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

FDC6036P-GF077 数据手册

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February 2009  
FDC6036P  
P-Channel 1.8V Specified PowerTrenchMOSFET  
General Description  
Features  
This dual P-Channel 1.8V specified MOSFET uses  
Fairchild’s advanced low voltage PowerTrench process.  
Packaged in FLMP SSOT-6, the RDS(ON) and thermal  
properties of the device are optimized for battery power  
management applications.  
–5 A, –20 V. RDS(ON) = 44 m@ VGS = –4.5 V  
RDS(ON) = 64 m@ VGS = –2.5 V  
RDS(ON) = 95 m@ VGS = –1.8 V  
Low gate charge, High Power and Current handling  
capability  
Applications  
Battery management/Charger Application  
High performance trench technology for extremely  
low RDS(ON)  
Load switch  
FLMP SSOT-6 package: Enhanced thermal  
performance in industry-standard package size  
Bottom Drain Contact  
4
5
6
3
2
1
Bottom Drain Contact  
MOSFET Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
–20  
V
V
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±8  
–5  
–20  
(Note 1a)  
A
PD  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
1.8  
W
(Note 1a)  
(Note 1b)  
1.8  
0.9  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
68  
1
RθJA  
RθJC  
°C/W  
Package Marking and Ordering Information  
.036  
FDC6036P  
7’’  
8mm  
3000 units  
FDC6036P Rev C3 (W)  
2009 Fairchild Semiconductor Corporation  

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P 沟道,PowerTrench® MOSFET,1.8V Specified,-20V,