Datasheet > FDC602P_01

FDC602P_01

更新时间： 2024-09-10 04:18:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	66K
描述
P-Channel 2.5V PowerTrench Specified MOSFET

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FDC602P_01 数据手册

April 2001

FDC602P

P-Channel 2.5V PowerTrench^ÒSpecified MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET uses a rugged

gate version of Fairchild’s advanced PowerTrench

process. It has been optimized for power management

applications with a wide range of gate drive voltage

(2.5V – 12V).

· –5.5 A, –20 V R_DS(ON)= 35 mW @ V_GS= –4.5 V

R_DS(ON)= 50 mW @ V_GS= –2.5 V

· Fast switching speed

· High performance trench technology for extremely

Applications

low R_DS(ON)

· Battery management

· Load switch

· Battery protection

SuperSOT -6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±12

–5.5

(Note 1a)

–20

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_qJA

°C/W

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.602

FDC602P

7’’

8mm

3000 units

Ó2001 Fairchild Semiconductor Corporation

FDC602P Rev C(W)

12 3 4 5

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