FDC6020C

更新时间： 2024-09-09 22:40:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	212K
描述
Complementary PowerTrench MOSFET

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数据手册

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FDC6020C 数据手册

November 2003

FDC6020C



Complementary PowerTrench MOSFET

General Description

Features

These N & P-Channel MOSFETs are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain superior

switching performance.

•

Q1 –4.2 A, –20V. R_DS(ON)= 55 mΩ @ V_GS= – 4.5 V

R_DS(ON)= 82 mΩ @ V_GS= – 2.5 V

Q2 5.9 A, 20V. R_DS(ON)= 27 mΩ @ V_GS= 4.5 V

R_DS(ON)= 39 mΩ @ V_GS= 2.5 V

•

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

•

Low gate charge

High performance trench technology for extremely

low R_DS(ON)

Applications

•

FLMP SSOT-6 package: Enhanced thermal

performance in industry-standard package size

•

DC/DC converter

Load switch

•

Motor Driving

Bottom Drain Contact

Q2 (N)

Q1 (P)

Bottom Drain Contact

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

–20

±12

–4.2

–20

±12

5.9

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

Power Dissipation for Dual Operation

Power Dissipation for single Operation

(Note 1a)

P_D

1.6

1.8

1.2

(Note 1a)

(Note 1b)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

FDC6020C

Reel Size

Tape width

Quantity

3000 units

.020

7’’

8mm

FDC6020C Rev B(W)

2003 Fairchild Semiconductor Corporation

12 3 4 5 6 7...9

中文翻译

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