FDC602P_NL

更新时间： 2024-09-10 12:58:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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6页	218K
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数据手册

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FDC602P_NL 数据手册

November 1999

ADVANCE INFORMATION

FDC602P

P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET uses a rugged

gate version of Fairchild’s advanced PowerTrench

process. It has been optimized for power management

applications with a wide range of gate drive voltage

(2.5V – 12V).

•= –5.5 A, –12 V R_DS(ON)= 0.033 Ω @ V_GS= –4.5 V

_DS(ON)= 0.052 Ω @ V_GS= –2.5 V

•= Fast switching speed.

•= High performance trench technology for extremely

Applications

low R_DS(ON)

•= Battery management

•= Load switch

•= Battery protection

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–12

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±12

-5.5

(Note 1a)

-30

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

3000 units

.602

FDC602P

7’’

8mm

FDC602P Rev A

1999 Fairchild Semiconductor Corporation

12 3 4 5 6

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