Datasheet > FDC5661N

FDC5661N

更新时间： 2024-09-11 11:14:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	406K
描述
MOSFET - N-Channel Logic Level, PowerTrench® , 60V, 4A, 60mΩ

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数据手册

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FDC5661N 数据手册

MOSFET – N-Channel,

Logic Level, POWERTRENCH⁾

60 V, 4 A, 60 mW

FDC5661N

Features

www.onsemi.com

• R

= 47 mW at V = 10 V, I = 4.3 A

GS D

DS(on)

= 60 mW at V = 4.5 V, I = 4 A

• Typ Q

= 14.5 nC at V = 10 V

g(TOT)

• Low Miller Charge

• UIS Capability

• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Pin 1

Compliant

TSOT23−6

CASE 419BL

Applications

• DC/DC Converter

• Motor Drives

MARKING DIAGRAM

XXX MG

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain to Source Voltage

Gate to Source Voltage

Symbol

Value

Unit

DSS

XXX = Specific Device Code

= Date Code

Drain Current Continuous (V = 10 V)

4.3

= Pb−Free Package

Pulsed

(Note: Microdot may be in either location)

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

PIN CONNECTIONS

1.6

Operating and Storage Temperature

T , T

−55 to

°C

STG

+150

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

°C/W

TO−263, 1in Copper Pad Area

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. E of 81 mJ is 100% test at L = 14 mH, I = 3.4 A, Starting T = 25°C.

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

Publication Order Number:

June, 2021 − Rev. 3

FDC5661N/D

12 3 4 5 6 7 8

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