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FDC5614PT/R_NL PDF预览

FDC5614PT/R_NL

更新时间: 2024-09-10 20:50:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
8页 288K
描述
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6

FDC5614PT/R_NL 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.36配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):3 A
最大漏源导通电阻:0.105 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC5614PT/R_NL 数据手册

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February 2002  
FDC5614P  
60V P-Channel Logic Level PowerTrenchMOSFET  
General Description  
Features  
This 60V P-Channel MOSFET uses Fairchild’s high  
voltage PowerTrench process. It has been optimized for  
power management applications.  
–3 A, –60 V.  
RDS(ON) = 0.105 @ VGS = –10 V  
RDS(ON) = 0.135 @ VGS = –4.5 V  
Fast switching speed  
Applications  
High performance trench technology for extremely  
low RDS(ON)  
DC-DC converters  
Load switch  
Power management  
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6  
D
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
–60  
V
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
V
A
20  
–3  
–20  
(Note 1a)  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.6  
0.8  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.564  
FDC5614P  
7’’  
8mm  
3000 units  
FDC5614P Rev C1 (W)  
2002 Fairchild Semiconductor Corporation  

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