Datasheet > FDC2WT20S120

FDC2WT20S120

更新时间： 2025-09-18 17:01:19

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
5页	650K
描述
TO-247-2(Type: A)

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中文翻译

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数据手册

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FDC2WT20S120 数据手册

www.fujielectric.com/products/semiconductor/

SiC-SBD

FDC2WT20S120

SiC Schottky Barrier Diode

Features

Internal circuit chart

• New 2nd Generation Technology

• Low forward voltage

• High surge current capability

• High speed switching

• Pb-free lead terminal; RoHS compliant

• Halogen-free molding compound

Cathode ①

CASE

Anode ②

①

②

Applications

• Switch mode power supply

• Uninterruptible power supply

• PV Power Conditioner

TO-247-2

Maximum Ratings and Characteristics

Absolute Maximum Ratings at T^vj= 25°C(unless otherwise speciﬁed)

Parameter

Symbol

Value

1200

Unit

Remarks

Repetitive peak reverse voltage

Continuous forward current

RRM

< 119 °C, D = 1

190.0

= 25 °C, t

= 150 °C, t

= 25 °C, t = 10 ms

= 10 ms

Surge non-repetitive forward current

(half sine wave)

FSM

142.5

= 10 ms

180.5

A²s

I²t value

∫I²dt

101.5

= 150 °C, t

Max. Power Dissipation

Operating junction temperature

Storage temperature

tot

174

= 25 °C

Tvj

-55 ~ +175

°C

stg

Electrical Characteristics at T^vj= 25°C(unless otherwise speciﬁed)

Static characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

DC blocking voltage

= 1 mA

1200

= 20A, Tvj = 25 °C

1.33

1.57

2.29

0.24

1.7

1.81

2.97

Forward voltage

Reverse current

= 20 A, Tvj = 150 °C

= 1200 V, Tvj = 25 °C

= 1200 V, Tvj = 150 °C

μA

Dynamic characteristics

Parameter

Symbol

Conditions

Min.

Typ.

21.9

Max.

Unit

= 800 V, I = 20 A,

Total Capacitive Charge

Total Capacitance

-di/dt = 200 A/μs,

vj = 150 °C

= 800 V, f = 1 MHz

Thermal Resistance

Parameter

Symbol

Min.

Typ.

Max.

Unit

°C/W

Thermal Resistance, Junction –Ambient

Thermal Resistance, Junction –Case

th(j-a)

Rth(j-c)

0.86

4447

2022/6

12 3 4 5

中文翻译

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