Datasheet > FDC3512-F095

FDC3512-F095

更新时间： 2024-11-19 06:13:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	133K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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FDC3512-F095 数据手册

February 2002

FDC3512

80V N-Channel PowerTrench^MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

• 3.0 A, 80 V

R_DS(ON)= 77 mΩ @ V_GS= 10 V

R_DS(ON)= 88 mΩ @ V_GS= 6 V

• High performance trench technology for extremely

low R_DS(ON)

Applications

• Low gate charge (13nC typ)

• High power and current handling capability

• Fast switching speed

• DC/DC converter

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

3.0

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.352

FDC3512

7’’

8mm

3000 units

FDC3512 Rev B2 (W)

2002 Fairchild Semiconductor Corporation

12 3 4 5

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