是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.2 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 1 A |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 0.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.7 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDC3601ND84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal- | |
FDC3601ND87Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal- | |
FDC3601NL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal- | |
FDC3601NS62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal- | |
FDC3612 | FAIRCHILD |
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100V N-Channel PowerTrench MOSFET | |
FDC3612 | ONSEMI |
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N 沟道 PowerTrench® MOSFET 100V,2.6A,125mΩ | |
FDC3612 (KDC3612) | KEXIN |
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N-Channel MOSFET | |
FDC3612_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 2.6A I(D), 100V, 1-Element, N-Channel, Silicon, Meta | |
FDC3612A (KDC3612A) | KEXIN |
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N-Channel MOSFET | |
FDC3612-F095 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |