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FDC3601N_NL

更新时间: 2024-11-18 12:59:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关光电二极管PC
页数 文件大小 规格书
5页 93K
描述
Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

FDC3601N_NL 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.2
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):1 A
最大漏极电流 (ID):1 A最大漏源导通电阻:0.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.7 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC3601N_NL 数据手册

 浏览型号FDC3601N_NL的Datasheet PDF文件第2页浏览型号FDC3601N_NL的Datasheet PDF文件第3页浏览型号FDC3601N_NL的Datasheet PDF文件第4页浏览型号FDC3601N_NL的Datasheet PDF文件第5页 
August 2001  
FDC3601N  
Dual N-Channel 100V Specified PowerTrench MOSFET  
Features  
General Description  
1.0 A, 100 V. RDS(ON)= 500 m@ VGS = 10 V  
These N-Channel 100V specified MOSFETs are  
produced using Fairchild Semiconductor's advanced  
PowerTrench process that has been especially tailored  
to minimize on-state resistance and yet maintain low  
gate charge for superior switching performance.  
RDS(ON)= 550 m@ VGS = 6.0 V  
Low gate charge (3.7nC typical)  
Fast switching speed.  
These devices have been designed to offer exceptional  
High performance trench technology for extremely  
power dissipation in  
a very small footprint for  
low R DS(ON)  
.
applications where the bigger more expensive SO-8  
and TSSOP-8 packages are impractical.  
SuperSOTTM-6 package: small footprint 72%  
Applications  
• Load switch  
(smaller than standard SO-8); low profile (1mm thick).  
• Battery protection  
• Power management  
D2  
S1  
4
5
6
3
2
1
D1  
G2  
S2  
SuperSOT TM-6  
G1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
100  
Units  
V
V
A
VGSS  
Gate-Source Voltage  
±20  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
1.0  
4.0  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
0.96  
0.9  
PD  
W
0.7  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
130  
60  
RθJA  
°C/W  
°C/W  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.601  
FDC3601N  
7’’  
8mm  
3000 units  
FDC3601N Rev C(W)  
2001 Fairchild Semiconductor Corporation  

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