5秒后页面跳转
FDC3612_NL PDF预览

FDC3612_NL

更新时间: 2024-11-18 21:15:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
5页 130K
描述
Small Signal Field-Effect Transistor, 2.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

FDC3612_NL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SUPERSOT-6针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.34配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):2.6 A
最大漏极电流 (ID):2.6 A最大漏源导通电阻:0.125 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.8 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC3612_NL 数据手册

 浏览型号FDC3612_NL的Datasheet PDF文件第2页浏览型号FDC3612_NL的Datasheet PDF文件第3页浏览型号FDC3612_NL的Datasheet PDF文件第4页浏览型号FDC3612_NL的Datasheet PDF文件第5页 
February 2002  
FDC3612  
100V N-Channel PowerTrenchMOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
low gate charge, low RDS(ON) and fast switching speed.  
2.6 A, 100 V  
RDS(ON) = 125 m@ VGS = 10 V  
RDS(ON) = 135 m@ VGS = 6 V  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
Low gate charge (14nC typ)  
High power and current handling capability  
Fast switching speed  
DC/DC converter  
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6  
D
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
100  
V
V
A
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
20  
2.6  
20  
(Note 1a)  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.6  
0.8  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.362  
FDC3612  
7’’  
8mm  
3000 units  
FDC3612 Rev B3 (W)  
2002 Fairchild Semiconductor Corporation  

与FDC3612_NL相关器件

型号 品牌 获取价格 描述 数据表
FDC3612A (KDC3612A) KEXIN

获取价格

N-Channel MOSFET
FDC3612-F095 FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDC3616N FAIRCHILD

获取价格

100V N-Channel PowerTrench MOSFET
FDC365P FAIRCHILD

获取价格

P-Channel PowerTrench MOSFET RoHS Compliant
FDC365P ONSEMI

获取价格

P 沟道,Power Trench® MOSFET,-35V,-4.3A,55mΩ
FDC365P_07 FAIRCHILD

获取价格

P-Channel PowerTrench MOSFET
FDC37B727 SMSC

获取价格

128 Pin Enhanced Super I/O Controller with ACPI Support
FDC37B72X SMSC

获取价格

128 Pin Enhanced Super I/O Controller with ACPI Support
FDC37B72X_07 SMSC

获取价格

128 Pin Enhanced Super I/O Controller with ACPI Support
FDC37B770 SMSC

获取价格

ENHANCED SUPER I/O CONTROLLER WITH WAKE UP FEATURES