Datasheet > FDC3535

FDC3535

更新时间： 2024-11-19 11:13:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	345K
描述
-80V P 沟道 PowerTrench® MOSFET

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FDC3535 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	12 weeks	风险等级：	1
Samacsys Description：	MOSFET, Fairchild, FDC3535 Fairchild FDC3535 P-channel MOSFET Transistor, 2.1 A, 80 V, 6-Pin SOT-23	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	80 V	最大漏极电流 (Abs) (ID)：	2.1 A
最大漏极电流 (ID)：	2.1 A	最大漏源导通电阻：	0.183 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	40 pF
JEDEC-95代码：	MO-193AA	JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	6
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1.6 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	TIN
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FDC3535 数据手册

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与FDC3535相关器件

型号	品牌	获取价格	描述	数据表
FDC3600	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.1A, 75V V(RRM),
FDC3601N	FAIRCHILD	获取价格	Dual N-Channel 100V Specified PowerTrench MOSFET
FDC3601N	ONSEMI	获取价格	双 N 沟道，100V 指定 PowerTrench® MOSFET，1.0A，500mΩ
FDC3601N_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-
FDC3601ND84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-
FDC3601ND87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-
FDC3601NL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-
FDC3601NS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-
FDC3612	FAIRCHILD	获取价格	100V N-Channel PowerTrench MOSFET
FDC3612	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET 100V，2.6A，125mΩ

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