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FDC2WT40S120 PDF预览

FDC2WT40S120

更新时间: 2024-11-19 15:18:59
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
5页 522K
描述
TO-247-2(Type: A)

FDC2WT40S120 数据手册

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www.fujielectric.com/products/semiconductor/  
SiC-SBD  
FDC2WT40S120  
SiC Schottky Barrier Diode  
Features  
Internal circuit chart  
• New 2nd Generation Technology  
• Low forward voltage  
• High surge current capability  
• High speed switching  
Cathode  
CASE  
Anode ②  
• Pb-free lead terminal; RoHS compliant  
• Halogen-free molding compound  
TO-247-2  
Applications  
• Switch mode power supply  
• Uninterruptible power supply  
• PV Power Conditioner  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings at Tvj= 25°C(unless otherwise specified)  
Parameter  
Symbol  
Value  
1200  
Unit  
V
Remarks  
Repetitive peak reverse voltage  
Continuous forward current  
V
RRM  
IF  
40  
A
Tc  
Tc  
Tc  
Tc  
Tc  
Tc  
< 119 °C, D = 1  
305.0  
A
= 25 °C, t  
= 150 °C, t  
= 25 °C, t = 10 ms  
p
= 10 ms  
Surge non-repetitive forward current  
(half sine wave)  
I
FSM  
228.8  
A
p
= 10 ms  
465.1  
A2s  
A2s  
W
p
I2t value  
I2dt  
261.6  
= 150 °C, t = 10 ms  
p
Max. Power Dissipation  
Operating junction temperature  
Storage temperature  
P
tot  
348  
= 25 °C  
Tvj  
-55 ~ +175  
-55 ~ +175  
°C  
°C  
T
stg  
Electrical Characteristics at Tvj= 25°C(unless otherwise specified)  
Static characteristics  
Parameter  
Symbol  
Conditions  
Min.  
Typ.  
-
Max.  
Unit  
DC blocking voltage  
V
V
DC  
I
I
I
R
F
F
= 1 mA  
1200  
-
V
V
= 40A, Tvj= 25 °C  
1.33  
1.57  
2.29  
0.5  
3.4  
1.81  
2.97  
20  
Forward voltage  
Reverse current  
F
= 40 A, Tvj= 150 °C  
-
-
-
V
V
V
R
= 1200 V, Tvj= 25 °C  
= 1200 V, Tvj= 150 °C  
μA  
μA  
IR  
R
67  
Dynamic characteristics  
Parameter  
Symbol  
Conditions  
Min.  
Typ.  
43  
Max.  
Unit  
nC  
V
R
= 800 V, I = 40 A,  
F
Total Capacitive Charge  
Total Capacitance  
Q
C
C
-di/dt= 200 A/μs,  
vj= 150 °C  
-
-
-
-
T
V
R
= 800 V, f = 1 MHz  
125  
pF  
Thermal Resistance  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
56  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction –Ambient  
Thermal Resistance, Junction –Case  
R
th(j-a)  
-
-
-
-
Rth(j-c)  
0.43  
4448  
JUNE 2022  
1

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