www.fujielectric.com/products/semiconductor/
SiC-SBD
FDC2WT40S120
SiC Schottky Barrier Diode
Features
Internal circuit chart
• New 2nd Generation Technology
• Low forward voltage
• High surge current capability
• High speed switching
Cathode ①
CASE
Anode ②
• Pb-free lead terminal; RoHS compliant
• Halogen-free molding compound
①
②
TO-247-2
Applications
• Switch mode power supply
• Uninterruptible power supply
• PV Power Conditioner
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tvj= 25°C(unless otherwise specified)
Parameter
Symbol
Value
1200
Unit
V
Remarks
Repetitive peak reverse voltage
Continuous forward current
V
RRM
IF
40
A
Tc
Tc
Tc
Tc
Tc
Tc
< 119 °C, D = 1
305.0
A
= 25 °C, t
= 150 °C, t
= 25 °C, t = 10 ms
p
= 10 ms
Surge non-repetitive forward current
(half sine wave)
I
FSM
228.8
A
p
= 10 ms
465.1
A2s
A2s
W
p
I2t value
∫I2dt
261.6
= 150 °C, t = 10 ms
p
Max. Power Dissipation
Operating junction temperature
Storage temperature
P
tot
348
= 25 °C
Tvj
-55 ~ +175
-55 ~ +175
°C
°C
T
stg
Electrical Characteristics at Tvj= 25°C(unless otherwise specified)
Static characteristics
Parameter
Symbol
Conditions
Min.
Typ.
-
Max.
Unit
DC blocking voltage
V
V
DC
I
I
I
R
F
F
= 1 mA
1200
-
V
V
= 40A, Tvj= 25 °C
1.33
1.57
2.29
0.5
3.4
1.81
2.97
20
Forward voltage
Reverse current
F
= 40 A, Tvj= 150 °C
-
-
-
V
V
V
R
= 1200 V, Tvj= 25 °C
= 1200 V, Tvj= 150 °C
μA
μA
IR
R
67
Dynamic characteristics
Parameter
Symbol
Conditions
Min.
Typ.
43
Max.
Unit
nC
V
R
= 800 V, I = 40 A,
F
Total Capacitive Charge
Total Capacitance
Q
C
C
-di/dt= 200 A/μs,
vj= 150 °C
-
-
-
-
T
V
R
= 800 V, f = 1 MHz
125
pF
Thermal Resistance
Parameter
Symbol
Min.
Typ.
Max.
56
Unit
°C/W
°C/W
Thermal Resistance, Junction –Ambient
Thermal Resistance, Junction –Case
R
th(j-a)
-
-
-
-
Rth(j-c)
0.43
4448
JUNE 2022
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